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SMD Type
100V Dual N-Channel PowerTrench
MOSFET KDS3601
IC IC
Features
1.
3 A, 100 V.
RDS(ON) = 480m RDS(ON) = 530m @ VGS = 10 V @ VGS = 6 V
Low gate charge (3.
7 nC typical) Fast switching speed High performance trench technology for extremely low RDS(ON) High power and current handling capability
Absolute Maximum Ratings Ta = 25
Parameter Drain to Source
Voltage Gate to Source
Voltage Drain Current Continuous (Note 1a) Drain Current Pulsed Power Dissipation for Dual Operation Power Dissipation for Single Operation (Note 1a) Power Dissipation for Single Operation (Note 1b) Power Dissipation for Single Operation (Note 1c) Operating and Storage Temperature Thermal Resis...