SEMICONDUCTOR
TECHNICAL DATA
General Description
This planar stripe
MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.
It is mainly suitable for LED Lighting and switching mode power supplies.
FEATURES VDSS(Min.
)= 400V, ID= 2.
2A Drain-Source ON Resistance : RDS(ON)=3.
4 Qg(typ.
) =4.
4nC
(max) @VGS =10V
MAXIMUM RATING (Tc=25 )
CHARACTERISTIC
SYMBOL
Drain-Source
Voltage
VDSS
Gate-Source
Voltage
VGSS
Drain Current
@TC=25 @TC=100
ID
Pulsed (Note1)
Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3)
IDP EAS EAR dv/dt
Drain Power Dissipa...