SEMICONDUCTOR
TECHNICAL DATA
General Description
This planar stripe
MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate charge and excellent avalanche characteristics.
It is mainly suitable for electronic ballast and switching mode power supplies.
FEATURES VDSS= 500V, ID= 2.
5A Drain-Source ON Resistance : RDS(ON)=2.
5 Qg(typ) = 7.
50nC
(Max) @VGS = 10V
KF3N50DZ/IZ
N CHANNEL MOS FIELD EFFECT TRANSISTOR
KF3N50DZ
A CD
B
H G
FF
J E
K L
N M
DIM MILLIMETERS A 6.
60 +_ 0.
20 B 6.
10 +_0.
20 C 5.
34 +_ 0.
30 D 0.
70 +_0.
20 E 2.
70 +_ 0.
15 F 2.
30 +_0.
10
G 0.
96 MAX
H 0.
90 MAX J 1.
80 +_0.
20 K 2.
30 +_0.
10 L 0.
50 +_ 0.
10 M 0.
50 +_0.
10
N...