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SEMICONDUCTOR
TECHNICAL DATA
KHB2D0N60P1/F1
N CHANNEL MOS FIELD EFFECT TRANSISTOR
General Description
This planar stripe
MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.
It is mainly suitable for switching mode power supplies.
A O C F E G B Q I
DIM MILLIMETERS _ 0.
2 9.
9 + A 15.
95 MAX B 1.
3+0.
1/-0.
05 C _ 0.
1 D 0.
8 + _ 0.
2 E 3.
6 + _ 0.
1 F 2.
8 + 3.
7 G H 0.
5+0.
1/-0.
05 1.
5 I _ 0.
3 13.
08 + J K 1.
46 _ 0.
1 1.
4 + L _ 0.
1 1.
27+ M _ 0.
2 2.
54 + N _ 0.
2 4.
5 + O _ 0.
2 2.
4 + P _ 0.
2 9.
2 + Q
FEATURES
VDSS= 600V, ID= 2.
0A Drain-Source ON Resistance : RDS(ON)=5.
0 @VGS = 10V
K M L J D N N
P
Qg(...