SSMMDDTTyyppee
MOSFET
Dual N-Channel High Density Trench
MOSFET KI8205T
Features
Super high dense cell trench design for low RDS(on).
Rugged and reliable.
Surface Mount package.
( SOT-23-6 ) 0.
4+0.
1
-0.
1
Unit: mm
0.
4
+0.
21.
6 -0.
1
+0.
22.
8 -0.
1
0.
55
1
+0.
01
2 -0.
01
+0.
2 -0.
1
0.
15 +0.
02 -0.
02
+0.
11.
1 -0.
1
0-0.
1 +0.
10.
68
-0.
1
D1
G1 S1
D2
G2 S2
S1 D1/D2
S2
1 2 3
6 G1 5 D1/D2 4 G2
Absolute Maximum Ratings Ta = 25
Parameter Drain-Source
Voltage Gate-Source
Voltage Drain Current-Continuous @ TA = 25 *1 Drain Current-Continuou -Pulse *2 Drain-Source Diode Forward Current *1 Maximum Power Dissipation TA=25 *1
TA=75 Operating Junction and Storage Temperature Range Thermal Resistance,...