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KM416S4030C

Part Number KM416S4030C
Manufacturer Samsung semiconductor
Description 1M x 16Bit x 4 Banks Synchronous DRAM
Published Apr 4, 2005
Detailed Description KM416S4030C Revision History Revision 1 (May 1998) - ICC2 N value (10mA) is changed to 12mA. Preliminary CMOS SDRAM Re...
Datasheet KM416S4030C




Overview
KM416S4030C Revision History Revision 1 (May 1998) - ICC2 N value (10mA) is changed to 12mA.
Preliminary CMOS SDRAM Revision .
2 (June 1998) - tSH (-10 binning) is revised.
REV.
2 June '98 KM416S4030C 1M x 16Bit x 4 Banks Synchronous DRAM FEATURES • • • • JEDEC standard 3.
3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs -.
CAS latency (2 & 3) -.
Burst length (1, 2, 4, 8 & Full page) -.
Burst type (Sequential & Interleave) All inputs are sampled at the positive going edge of the system clock Burst read single-bit write operation DQM for masking Auto & self refresh 64ms refresh period (4K cycle) Preliminary CMOS SDRAM GENER...






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