KM416V4004C,KM416V4104C
CMOS DRAM
4M x 16bit
CMOS Dynamic RAM with Extended Data Out
DESCRIPTION
This is a family of 4,194,304 x 16 bit Extended Data Out Mode
CMOS DRAMs.
Extended Data Out Mode offers high speed random access of memory cells within the same row.
Refresh cycle(4K Ref.
or 8K Ref.
), access time (-45, -5 or -6), power consumption(Normal or Low power) are optional features of this family.
All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities.
Furthermore, Self-refresh operation is available in L-version.
This 4Mx16 EDO Mode DRAM family is fabricated using Samsung′s advanced
CMOS process to realize high band-width, low power consumption...