Part Number
|
KM718V089 |
Manufacturer
|
Samsung semiconductor |
Description
|
512Kx36 & 1Mx18 Synchronous SRAM |
Published
|
Apr 16, 2005 |
Detailed Description
|
KM736V989 KM718V089
Document Title
512Kx36 & 1Mx18 Synchronous SRAM
512Kx36 & 1Mx18-Bit Synchronous Pipelined Burst SR...
|
Datasheet
|
KM718V089
|
Overview
KM736V989 KM718V089
Document Title
512Kx36 & 1Mx18 Synchronous SRAM
512Kx36 & 1Mx18-Bit Synchronous Pipelined Burst SRAM
Revision History
Rev.
No.
0.
0 0.
1 0.
2 History Initial draft 1.
Update ICC & ISB values.
1.
Change ISB value from 150mA to 110mA at -67.
2.
Change ISB value from 130mA to 90mA at -72 .
3.
Change ISB value from 120mA to 80mA at -10 .
1.
Add tCYC 167MHz and 183MHz.
2.
Changed DC condition at Icc and parameters Icc ; from 420mA to 400mA at -67, from 400mA to 380mA at -72, from 350mA to 320mA at -10, 1.
Final Spec Release.
Draft Date Dec.
29.
1998 May.
27.
1999 Sep.
04.
1999 Remark Preliminary Preliminary Preliminary
0.
3
Nov.
19.
1999
Preliminary
1.
0
Dec.
08.
1999
Fina...
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