SEMICONDUCTOR
TECHNICAL DATA
KMB060N40BA
N-Ch Trench
MOSFET
General Description
This Trench
MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.
It is mainly suitable for Back-light Inverter and power Supply.
FEATURES VDSS=40V, ID=60A.
Low Drain to Source ON Resistance.
: RDS(ON)=8.
5m (Max.
) @ VGS=10V : RDS(ON)=11m (Max.
) @ VGS=4.
5V Super High Dense Cell Design.
High Power and Current Handling Capability.
A
F
J G C
B D
E H
N O
M
K L
DIM MILLIMETERS
A 9.
95 +_ 0.
05
B 9.
2+_ 0.
1
C 8.
00
P D 15.
3+_ 0.
2 E 4.
9 +_0.
2
RF
1.
5
G 2.
54 +_ 0.
05
Q H 0.
80 +_ 0.
05
J 1.
27 +_0.
10
K 4.
50
L 1.
30
M 6.
90
N 1...