SEMICONDUCTOR
TECHNICAL DATA
General Description
This Trench
MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.
It is mainly suitable for Load switch and Back-Light Inverter.
FEATURES VDSS=40V, ID=3.
5A Drain-Source ON Resistance RDS(ON)=45m (Max.
) @ VGS=10V RDS(ON)=62m (Max.
) @ VGS=4.
5V Super High Dense Cell Design
KMB3D5N40SA
N-Ch Trench
MOSFET
E L BL
DIM MILLIMETERS A 2.
93+_ 0.
20
B 1.
30+0.
20/-0.
15
A G H
D
23
C 1.
30 MAX D 0.
40+0.
15/-0.
05
E 2.
40+0.
30/-0.
20 1 G 1.
90
H 0.
95
J 0.
13+0.
10/-0.
05
Q K 0.
00 ~ 0.
10
PP
L 0.
55
M 0.
20 MIN
N 1.
00+0.
20/-0.
10
C N K J
P7
Q 0.
1 MAX
M
MAXIMUM RATING (Ta...