SEMICONDUCTOR
TECHNICAL DATA
GENERAL DESCRIPTION
This Trench
MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.
It is mainly suitable for DC/DC Converters.
FEATURES VDSS=40V, ID=6A.
Drain-Source ON Resistance.
RDS(ON)=38m (Max.
) @VGS=10V RDS(ON)=50m (Max.
) @VGS=4.
5V Super High Dense Cell Design Very fast switching
MAXIMUM RATING (Ta=25 Unless otherwise noted)
CHARACTERISTIC
SYMBOL RATING UNIT
Drain Source
Voltage
Gate Source
Voltage
Drain Current
Ta=25 Pulsed(Note1)
Peak Diode Recovery dv/dt (Note 2)
VDSS VGSS ID * IDP dv/dt
40 V 12 V 6A 24 A 4.
5 V/ns
Peak Diode Recovery di/dt
di/dt 200 A/us...