SEMICONDUCTOR
TECHNICAL DATA
GENERAL DESCRIPTION
This Trench
MOSFET has better characteristics, such as low on resistance, low gate charge and excellent avalanche characteristiscs.
It is mainly suitable for battery protection circuit.
FEATURES VDSS=-40V, ID=-7.
5A.
Drain-Source ON Resistance.
RDS(ON)=30m (Max.
) @ VGS=-10V RDS(ON)=37m (Max.
) @ VGS=-4.
5V Super High Dense Cell Design
MOSFET Maximum Ratings (Ta=25 Unless otherwise noted)
CHARACTERISTIC
SYMBOL PATING UNIT
Drain Source
Voltage
Gate Source
Voltage
Drain Current
DC@Ta=25 Pulsed
Drain Source Diode Forward Current
Drain Power Dissipation DC@Ta=25
Maximum Junction Temperature
Storage Temperature Range
VDSS VGSS ID* IDP
IS P...