SEMICONDUCTOR
TECHNICAL DATA
General Description
It s Mainly Suitable for Load Switching Cell Phones, Battery Powered Systems and Level-Shifter.
FEATURES
VDSS=-20V, ID=-0.
3A Drain-Soure ON Resistance
: RDS(ON)=1.
2 : RDS(ON)=1.
6 : RDS(ON)=2.
7
@ VGS=-4.
5V @ VGS=-2.
5V @ VGS=-1.
8V
KML0D3P20V
P-Ch Trench
MOSFET
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Drain-Source
Voltage
Gate-Source
Voltage
Drain Current
DC @TA=25 DC @TA=85 Pulsed
Source-Drain Diode Current
Drain Power Dissipation
Maximum Junction Temperature
Storage Temperature Range
Thermal Resistance, Junction to Ambient
VDSS VGSS
ID*
IDP IS PD* Tj Tstg RthJA*
Note 1) *Surface Mounted on FR4 Board, t 5sec
P-Ch -20
6 -...