SEMICONDUCTOR
TECHNICAL DATA
General Description
It s Mainly Suitable for Load Switching Mobile Phones, Battery Powered Systems and Level-Shifter.
FEATURES VDSS= -20V, ID= -0.
35A Drain-Soure ON Resistance : RDS(ON)=1.
2 @ VGS= -4.
5V : RDS(ON)=1.
6 @ VGS= -2.
5V : RDS(ON)=2.
7 @ VGS= -1.
8V ESD Protection diode.
KML0D4P20E
P-Ch Trench
MOSFET
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL P-Ch UNIT
Drain-Source
Voltage Gate-Source
Voltage
VDSS -20 V
VGSS
6V
Drain Current
DC @TA=25 DC @TA=85 Pulsed
(Note 1) (Note 1) (Note 1)
ID IDP
-350 -255 -1400
mA
Drain Power Dissipation
(Note 2) PD
210 mW
Maximum Junction Temperature Storage Temperature Range
Tj 150 Tstg -55 150
Thermal Resist...