KMM366S403CTL
Revision History Revision .
3 (Mar.
1998)
PC66 SDRAM MODULE
•Some Parameter values & Characteristics of comp.
level are changed as below : - Input leakage currents (Inputs) : ±5uA to ±1uA.
- Input leakage currents (I/O) : ±5uA to ±1.
5uA.
- Cin to be measured at VDD = 3.
3V, TA = 23°C, f = 1MHz, VREF = 1.
4V ± 200mV.
- AC Operating Condition is changed as defined : VIH(max) = 5.
6V AC.
The overshoot
voltage duration is≤ 3ns.
VIL(min) = -2.
0V AC.
The undershoot
voltage duration is≤ 3ns.
REV.
3 Mar.
'98
KMM366S403CTL
KMM366S403CTL SDRAM DIMM
PC66 SDRAM MODULE
4Mx64 SDRAM DIMM based on 2Mx8, 4K Refresh, 3.
3V Synchronous DRAMs with SPD GENERAL DESCRIPTION
The Samsung KMM366S403CTL...