SEMICONDUCTOR
TECHNICAL DATA
General Description
This Super Junction
MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.
It is mainly suitable for active power factor correction and switching mode power supplies.
FEATURES VDSS=650V, ID=8A Drain-Source ON Resistance : RDS(ON)(Max)=0.
62 @VGS=10V Qg(typ.
)= 21nC
MAXIMUM RATING (Tc=25 )
CHARACTERISTIC
SYMBOL
RATING
Drain-Source
Voltage Gate-Source
Voltage
VDSS VGSS
650 30
@TC=25
Drain Current @TC=100
Pulsed (Note1)
Single Pulsed Avalanche Energy (Note 2)
Repetitive Avalanche Energy (Note 1)
Peak Diode Recovery dv/dt (Note 3)
Drain Power Dissipatio...