SMD Type
HEXFET Power
MOSFET KRF2805S
Features
Advanced Process Technology
+ 0 .
1 1 .
2 7 -0 .
1
Transistors IC
TO-263
+0.
1 1.
27-0.
1 +0.
2 4.
57-0.
2
Unit: mm
Ultra Low On-Resistance Dynamic dv/dt Rating
Repetitive Avalanche Allowed up to Tjmax
+ 0 .
2 5 .
2 8 -0 .
2
+0.
1 1.
27-0.
1
0.
1max
+0.
1 0.
81-0.
1
2.
54
+0.
2 -0.
2 +0.
1 5.
08-0.
1
+ 0 .
2 2 .
5 4 -0 .
2
+ 0 .
2 1 5 .
2 5 -0 .
2
Fast Switching
+ 0 .
2 8 .
7 -0 .
2
2.
54
+0.
2 0.
4-0.
2
Absolute Maximum Ratings Ta = 25
Parameter Continuous Drain Current, VGS @ 10V,TC = 25 Continuous Drain Current, VGS @ 10V,TC = 100 Pulsed Drain Current Power Dissipation TC = 25 Linear Derating Factor Gate-to-Source
Voltage Single Pulse Avalanche Energy Avalanche Cur...