SMD Type
HEXFET Power
MOSFET KRF4905S
TO-263
Features
Advanced Process Technology Surface Mount
+ 0 .
2 8 .
7 -0 .
2 + 0 .
1 1 .
2 7 -0 .
1
Transistors IC
Unit: mm
+0.
1 1.
27-0.
1 +0.
2 4.
57-0.
2
175
Operating Temperature
Fast Switching P-Channel Fully Avalanche Rated
+0.
1 1.
27-0.
1
0.
1max
+0.
1 0.
81-0.
1
+ 0 .
2 5 .
2 8 -0 .
2
2.
54
+0.
2 -0.
2 +0.
1 5.
08-0.
1
+ 0 .
2 2 .
5 4 -0 .
2
+ 0 .
2 1 5 .
2 5 -0 .
2
2.
54
+0.
2 0.
4-0.
2
Absolute Maximum Ratings Ta = 25
Parameter Continuous Drain Current, VGS @ -10V,Tc = 25 Continuous Drain Current, VGS @ -10V,Tc = 100 Pulsed Drain Current*1 Power Dissipation Ta = 25 Power Dissipation Tc = 25 Linear Derating Factor Gate-to-Source
Voltage Single Pulse Avalanche Energ...