isc Silicon PNP Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown
Voltage
: V(BR)CEO= -150V(Min) ·DC Current Gain
: hFE= 40-140@ IC= -0.
5A ·Complement to Type KSC2073 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in general purpose power amplifier ,
vertical output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base
Voltage
VCEO Collector-Emitter
Voltage
VEBO
Emitter-Base
Voltage
-150
V
-150
V
-5
V
IC
Collector Current-Continuous
PC
Total Power Dissipation @ TC=25℃
TJ
Junction Temperature
Tstg
Storage Temperature Range
-1.
5
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