KSB601
KSB601
Low Frequency Power Amplifier
• Medium Speed Switching Industrial Use • Complement to KSD560
1
TO-220 2.
Collector 3.
Emitter
1.
Base
PNP Epitaxial Silicon Darlington Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol VCBO VCEO VEBO IC ICP IB PC PC TJ TSTG Parameter Collector-Base
Voltage Collector-Emitter
Voltage Emitter-Base
Voltage Collector Current (DC) *Collector Current (Pulse) Base Current Collector Dissipation (Ta=25°C) Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature Value - 100 - 100 -7 -5 -8 - 0.
5 1.
5 30 150 - 55 ~ 150 Units V V V A A A W W °C °C
* PW≤10ms, Duty Cycle≤50%
©2000 Fairchild Semiconductor International
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