isc Silicon NPN Power Transistor
KSC3503
DESCRIPTION ·Low Collector Saturation
Voltage ·High breakdown
voltage ·Silicon NPN epitaxial planar transistor ·Small reverse transfer capacitance and excellent high
frequency characteristic ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·For high definition CRT display ,video output
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base
Voltage
300
V
VCEO Collector-Emitter
Voltage
300
V
VEBO
Emitter-Base
Voltage
5
V
IC
Collector Current-Continuous
PC
Collector Power Dissipation @ Tc=25℃
TJ
Junction Temperature
0.
1
A
7
W
150
...