isc Silicon NPN Darlington Power Transistor
KSD1692
DESCRIPTION ·Low Collector–Emitter Sustaining
Voltage ·High DC Current Gain ·Built-in a damper diode at E-C ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for general-purpose amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base
Voltage
150
V
VCEO
Collector-Emitter
Voltage
100
V
VEBO
Emitter-Base
Voltage
8
V
IC
Collector Current-Continuous
3
A
ICM
Collector Current-Peak
Collector Power Dissipation
Ta=25℃ PC
Collector Power Dissipation
TC=25℃
Ti
Junction Temperature
5
A
1.
3 W
15...