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KSD5062

Part Number KSD5062
Manufacturer NJS
Description Silicon NPN Power Transistor
Published Dec 3, 2021
Detailed Description ^^mi-Conductor LPioducti, Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-60...
Datasheet KSD5062




Overview
^^mi-Conductor LPioducti, Una.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081 U.
S.
A.
TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon NPN Power Transistor KSD5062 DESCRIPTION • High Breakdown Voltage- : VCBO= 1500V (Min) • High Switching Speed • High Reliability • Built-in Damper Diode APPLICATIONS • Designed for color TV horizontal output applications ABSOLUTE MAXIMUM RATINGS(Ta=25°C) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 6 V Ic Collector Current- Continuous 5 A ICP Collector Current-Peak Collector Power Dissipation PC @ TC=25'C Tj Junction Temperature 16 A...






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