isc Silicon NPN Power Transistor
KSE340
DESCRIPTION ·High Collector-Emitter breakdown
voltage ·Low Collector Saturation
Voltage ·Complement to Type KSE350 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·High
voltage general purpose applications ·Suitable for transform
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base
Voltage
300
V
VCEO
Collector-Emitter
Voltage
300
V
VEBO
Emitter-Base
Voltage
5
V
IC
Collector Current-Continuous
Collector Power Dissipation
@ TC=25℃ PC
Collector Power Dissipation
@ Ta=25℃
TJ
Junction Temperature
0.
5
A
20 W
1.
3
150
℃
Tstg
Storage Temperature Range
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