J B
EB
SEMICONDUCTOR
TECHNICAL DATA
HIGH
VOLTAGE SWITCHING APPLICATION.
FEATURES High
Voltage : VCEO=-150V.
High Transition Frequency : fT=120MHz(Typ.
).
1W (Monunted on Ceramic Substrate).
Small Flat Package.
Complementary to KTC4372.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Collector-Base
Voltage
VCBO
-150
Collector-Emitter
Voltage
VCEO
-150
Emitter-Base
Voltage
VEBO
-5
Collector Current
IC -50
Base Current
IB -10
Collector Power Dissipation
PC 500 PC* 1
Junction Temperature
Tj 150
Storage Temperature Range
Tstg -55 150
PC* : KTA1660 mounted on ceramic substrate (250mm2x0.
8t)
UNIT V V V mA mA mW W
KTA1660
EPITAXIAL PLANAR PNP TRANSISTOR
AC H
G
DD K
FF...