SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURE ᴌHigh DC Current Gain : hFE=600ᴕ3600.
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
Collector-Base
Voltage Collector-Emitter
Voltage Emitter-Base
Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range
VCBO VCEO VEBO
IC IB PC Tj Tstg
RATING 50 50 5 150 30 625 150
-55ᴕ150
UNIT V V V mA mA
mW ᴱ ᴱ
L M
C
KTC3112
EPITAXIAL PLANAR NPN TRANSISTOR
BC
JA
K
E G
D
H
FF
1 23
N DIM MILLIMETERS A 4.
70 MAX B 4.
80 MAX C 3.
70 MAX D 0.
45 E 1.
00 F 1.
27 G 0.
85 H 0.
45 J 14.
00 +_0.
50 K 0.
55 MAX L 2.
30 M 0.
45 MAX N 1.
00
1.
EMITTER 2.
COLLECTOR 3.
BASE
T...