isc Silicon NPN Power Transistor
DESCRIPTION ·High Collector-Emitter Breakdown
Voltage
VCEO= 160V(Min) ·Complement to Type KTA1659 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for high
voltage applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base
Voltage
160
V
VCEO
Collector-Emitter
Voltage
160
V
VEBO
Emitter-Base
Voltage
5.
0
V
IC(DC)
Collector Current(DC)
1.
5
A
IB(DC) PC TJ
Base Current
Collector Power Dissipation @TC=25℃
Junction Temperature
0.
15
A
20
W
150
℃
Tstg
Storage Temperature
-55~150 ℃
KTC4370
isc website： www.
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com
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