SEMICONDUCTOR
TECHNICAL DATA
General Description
This Trench
MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.
It is mainly suitable for LED Lighting and DC/DC Converters.
FEATURES VDSS(Min.
)= 100V, ID= 5A Drain-Source ON Resistance : RDS(ON)=0.
36 Qg(typ.
) =4.
2nC
(max) @VGS =10V
MAXIMUM RATING (Tc=25 )
CHARACTERISTIC
SYMBOL
Drain-Source
Voltage Gate-Source
Voltage
VDSS VGSS
@TC=25
Drain Current @TC=100
Pulsed (Note1)
Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3)
Drain Power Dissipation
TC=25 Derate above25
ID IDP EAS EAR d...