LESHAN RADIO COMPANY, LTD.
Band Switching Diode
z Applications High frequency switching
z Features 1) Small surface mounting type.
2) High reliability.
3) We declare that the material of product compliance with RoHS requirements.
z Construction Silicon epitaxial planar
Driver Marking
L1SS356T1G =B
Absolute maximum ratings (TA=25°C)
Parameter
Symbol
DC reverse
voltage
VR
DC forward current
IF
Junction temperature
Tj
Storage temperature
Tstg
Limits 35 100 125
-55~+125
L1SS356T1G
1
2
SOD– 323
1 CATHODE
2 ANODE
Unit V mA °C °C
Electrical characteristics (TA=25°C)
Parameter
Symbol Min.
Typ.
Max.
Unit
Forward
voltage
VF – – 1.
0 V
Reverse current
IR – – 10 nA
Capacitance ...