LESHAN RADIO COMPANY, LTD.
Medium Power Transistor (32V, 0.
8A) L2SD1781KQLT1G L2SD1781KQLT1G Series S-L2SD1781KQLT1G Series FFeatures 1) Very low VCE(sat).
VCE(sat) t 0.
4 V (Typ.
) (IC / IB = 500mA / 50mA) 2) High current capacity in compact package.
3) Complements the L2SB1197KXLT1G 4) We declare that the material of product compliance with RoHS requirements.
5) S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
3 1 2 SOT-23 /TO-236AB FStructure Epitaxial planar type NPN silicon transistor FAbsolute maximum ratings (Ta = 25_C) COLLECTOR 3 1 BASE 2 EMITTER ORDERING INFORMATION Device L2SD1781KQL...

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