Ordering number : EN5823
CMOS IC
LC35256D-10, LC35256DM, DT-70/10
Dual Control Pins: OE and CE 256K (32768-word × 8-bit) SRAM
Overview
The LC35256D, LC35256DM, and LC35256DT are 32768-word × 8-bit asynchronous silicon gate
CMOS static RAMs.
These devices use a 6-transistor full
CMOS memory cell, and feature low-
voltage operation, low current drain, and an ultralow standby current.
They provide two control signal inputs: an OE input for highspeed access and a chip select (CE) input for device selection and low power operating mode.
This makes these devices optimal for systems that require low power or battery backup, and they allow memory to be expanded easily.
Their ultralow standby curre...