Ordering number : ENN6303
CMOS IC
LC35V256EM, ET-70W
256K (32K words × 8 bits) SRAM Control pins: OE and CE
Overview
The LC35V256EM-70W and LC35V256ET-70W are asynchronous silicon-gate
CMOS SRAMs with a 32768word by 8-bit structure.
These are full-
CMOS devices with 6 transistors per memory cell, and feature ultralow
voltage operation, a low operating current drain, and an ultralow standby current.
Control inputs include OE for fast memory access and CE for power saving and device selection.
This makes these devices optimal for systems that require low power or battery backup, and makes memory expansion easy.
The ultralow standby current allows these devices to be used with capacitor backup...