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LD01N60
POWER FIELD EFFECT TRANSISTOR
FEATURES
Robust High
Voltage Termination Avalanche Energy Specified Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Diode is Characterized for Use in Bridge Circuits IDSS and VDS(on) Specified at Elevated Temperature
GENERAL DESCRIPTION
This high
voltage MOSFET uses an advanced termination scheme to provide enhanced
voltage-blocking capability without degrading performance over time.
In addition, this advanced
MOSFET is designed to withstand high energy in avalanche and commutation modes.
The new energy efficient design also offers a drain-to-source diode with a fast recovery time.
Designed...