LF411QML-SP
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SNOSAO6C – OCTOBER 2005 – REVISED MARCH 2013
LF411QML Low Offset, Low Drift JFET Input Operational Amplifier
Check for Samples: LF411QML-SP
FEATURES
1
•23 Available with Radiation Specification – ELDRS FREE 100 krad(Si)
• Internally Trimmed Offset
Voltage: 0.
5 mV(Typ) • Input Offset
Voltage Drift: 10 μV/°C • Low Input Bias Current: 50 pA • Low Input Noise Current: 0.
01 pA/√Hz • Wide Gain Bandwidth: 3 MHz • High Slew Rate: 10V/μs • Low Supply Current: 1.
8 mA • High Input Impedance: 1012Ω • Low Total Harmonic Distortion: AV = 10, RL =
10KΩ, VO = 20VP-P, BW = 20Hz - 20KHz 0.
02% • Low 1/f Noise Corner: 50 Hz • Fast Settling Time to 0.
01%: 2 μs
DESCRIPTION
This device...