Part Number
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LK802 |
Manufacturer
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Polyfet RF Devices |
Description
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SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR |
Published
|
Mar 22, 2005 |
Detailed Description
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polyfet rf devices
LK802
General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF ...
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Datasheet
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LK802
|
Overview
polyfet rf devices
LK802
General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications.
Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.
"Polyfet" process features low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency.
TM
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR 45.
0 Watts Push - Pull Package Style AK HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE
o
ABSOLUTE MAXIMUM RATINGS ( T = 25 C )
Total Device Dissipation 140 Watts Junction to Case Thermal Resistance o 1.
10 C/W Maximum Junction Temperature o 2...
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