LESHAN RADIO COMPANY, LTD.
20V N-Channel Enhancement-Mode
MOSFET
FEATURES
● RDS(ON)≦85mΩ@VGS=4.
5V ● RDS(ON)≦115mΩ@VGS=2.
5V ● RDS(ON)≦135mΩ@VGS=1.
8V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current
capability
● S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
APPLICATIONS
● Power Management in Notebook ● Portable Equipment ● Load Switch ● DSC
Ordering Information
Device
LN2302ALT1G S-LN2302ALT1G
LN2302ALT3G S-LN2302ALT3G
Marking 02A
02A
Shipping 3000/Tape& Reel
10000/Tape& Reel
LN2302ALT1G S-LN2302ALT1G
3
1 2 SOT– 23
3
1 2
Absolute Ma...