Preliminary Datasheet LPM9022
Dual N -Channel Enhancement Power
MOSFET
General Description
The LPM9022 integrates two N-Channel enhancement
MOSFET Transistor.
It uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
This device is suitable for using in DC-DC conversion, power switch and charging circuit.
Standard Product LPM9022 is Pb-free and Halogen-free.
Features
Trench Technology Single NMOS: VDS=20V, ID=6A
RDS(ON) 26mΩ @ VGS=2.
5V RDS(ON) 20mΩ @ VGS=4.
5V Super high density cell design Extremely Low Threshold
Voltage Small package DFN-6L 2*3mm
Order Information
LPM9022 □ □ □ F: Pb-Free
Package Type QV: DFN-6L
Applications
Driver...