Preliminary Datasheet LPM9029C
N and P-Channel Enhancement Power
MOSFET
General Description
The LPM9029C integrates N-Channel and P-Channel enhancement
MOSFET Transistor.
It uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge.
This device is suitable for using in DC-DC conversion, power switch and charging circuit.
Standard Product LPM9029C is Pb-free and Halogen-free.
Order Information
LPM9022 □ □ □ F: Pb-Free
Package Type SO: SOP-8
Marking Information
Device
Marking
LPM9029C
Package SOP-8
Shipping 3K/REEL
Features
Trench Technology NMOS:
VNDS=20V, IND=12A RNDS(ON) 26mΩ @ VGS=2.
5V RNDS(ON) 20mΩ @ VGS=4.
5V PMOS: VPDS=-20V, IPD=-4.
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