Filtronic
Solid State
FEATURES
DRAIN PAD (x4)
LP3000/LPV3000
2W Power PHEMT
• • • • •
+33.
5 dBm Typical Power at 18 GHz 7 dB Typical Power Gain at 18 GHz +30.
5 dBm at 3.
3V Battery
Voltage Low Intermodulation Distortion 45% Power-Added-Efficiency at 18 GHz
SOURCE BOND PAD (x2)
GATE PAD (x4)
DIE SIZE: 28.
3 x 16.
5 mils (720 x 420 µm) DIE THICKNESS: 2.
6 mils (65 µm typ.
) BONDING PADS: 1.
9 x 2.
4 mils (50 x 60 µm typ.
)
DESCRIPTION AND APPLICATIONS
The LP3000 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.
25 µm by 3000 µm Schottky barrier gate.
The recessed “mushroom”...