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Part Number
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LR401 |
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Manufacturer
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Polyfet RF Devices |
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Description
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SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR |
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Published
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Apr 25, 2005 |
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Detailed Description
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polyfet rf devices
LR401
General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF ...
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Datasheet
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LR401
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Overview
polyfet rf devices
LR401
General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications.
Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.
"Polyfet" process features low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency.
TM
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR 130.
0 Watts Push - Pull Package Style LR HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE
o
ABSOLUTE MAXIMUM RATINGS ( T = 25 C )
Total Device Dissipation 230 Watts Junction to Case Thermal Resistance o 0.
75 C/W Maximum Junction Temperature o ...
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