LESHAN RADIO COMPANY, LTD.
N-Channel 1.
8-V (G-S)
MOSFET
FEATURES D TrenchFETr Power
MOSFET: 1.
8-V Rated D Gate-Source ESD Protected: 2000 V D High-Side Switching D Low On-Resistance: 0.
7 W D Low Threshold: 0.
8 V (typ) D Fast Switching Speed: 10 ns D S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
BENEFITS D Ease in Driving Switches D Low Offset (Error)
Voltage D Low-
Voltage Operation D High-Speed Circuits D Low Battery
Voltage Operation
LSI1012LT1G S-LSI1012LT1G
3
1 2
SOT-23
Gate 1
3 Drain
APPLICATIONS D Drivers: Relays, Solenoids, Lamps, Hammers,
Displays, Memories D Battery Operated Systems D P...