SiC
MOSFET
LSIC1MO120E0080, 1200 V, 80 mOhm, TO-247-3L
LSIC1MO120E0080 1200 V N-channel, Enhancement-mode SiC
MOSFET
RoHS Pb
Product Summary
Characteristics VDS Typical RDS(ON) ID ( TC ≤ 100 °C)
Value 1200
80 25
Unit V
mΩ A
Circuit Diagram TO-247-3L
1 23
Environmental
• Littelfuse “RoHS” logo = RoHS RoHS conform
• Littelfuse “HF” logo = Halogen Free
• Littelfuse “Pb-free” logo = Pb Pb-free lead plating
* * Body
diode
Features
• O ptimized for highfrequency, high-efficiency applications
• Extremely low gate charge and output capacitance
• Low gate resistance for high-frequency switching
• N ormally-off operation at all temperatures
• U ltra-low on-resistance
Applications
• H...