com LX5530 TM ® InGaP HBT 4.
5 – 6.
0GHz Power Amplifier P RODUCTION D ATA S HEET DESCRIPTION KEY FEATURES ƒ Broadband 4.
9 – 5.
9GHz Operation ƒ Advanced InGaP HBT ƒ Single-Polarity 3 – 5V Supply ƒ Power Gain up to ~ 33dB for VC=5V, Icq = 250mA ƒ Power Gain ~28dB across 4.
95.
85GHz ƒ OFDM Mask Compliance Power Pout ~ +25dBm over 4.
95.
85GHz (ACPR ~ -50dBc @ ±30MHz Offset) ƒ Pout up to +23dBm with EVM ~3% (VC = 5V) ƒ EVM ~2.
5% for Pout=+21dBm across 4.
95.
85GHz (VC = 5V) ƒ EVM ~2.
5% for Pout=+19dBm across 4.
95.
85GHz (VC = 4V) ƒ Total Current ~250mA for Pout = +20dBm, Duty Cycle = 99% (VC= 4V) ƒ Complete On-Chip Input Match ƒ Simple Output Match for Optimal Broadband EVM ƒ ...

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