Part Number
|
M02N601D1 |
Manufacturer
|
CITC |
Description
|
Silicon N-Channel Power MOSFET |
Published
|
Mar 13, 2018 |
Detailed Description
|
M02N601D1
600V N-Channel General Purpose Switching Device Applications
■ Features
• 600V, 2.0A, RDS(on) = maximum 5Ω@VG...
|
Datasheet
|
M02N601D1
|
Overview
M02N601D1
600V N-Channel General Purpose Switching Device Applications
■ Features
• 600V, 2.
0A, RDS(on) = maximum 5Ω@VGS = 10V.
• 100% avalanche, EAS tested.
• Suffix "G" indicates Halogen-free part, ex.
M02N601D1G.
■ Outline
TO-251
0.
264(6.
7) 0.
248(6.
3) 0.
205(5.
2) 0.
189(4.
8)
0.
060(1.
52) 0.
058(1.
48)
0.
098(2.
5)
0.
083(2.
1) 0.
024(0.
6)
0.
016(0.
4)
0.
193(4.
9) 0.
181(4.
6)
0.
217(5.
52) 0.
216(5.
48)
0.
583(14.
80) 0.
559(14.
20)
0.
209(5.
3) 0.
193(4.
9)
■ Mechanical data
• Epoxy:UL94-V0 rated flame retardant • Case : JEDEC TO-251 molded plastic body over
passivated chip • Lead : Axial leads, solderable per MIL-STD-202,
Method 208 guranteed.
GDS
0.
035(0.
90) 0.
020(0.
50)
0.
297(7.
55) 0.
293(7.
45)
0.
035(0...
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