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M02N601D1

Part Number M02N601D1
Manufacturer CITC
Description Silicon N-Channel Power MOSFET
Published Mar 13, 2018
Detailed Description M02N601D1 600V N-Channel General Purpose Switching Device Applications ■ Features • 600V, 2.0A, RDS(on) = maximum 5Ω@VG...
Datasheet M02N601D1




Overview
M02N601D1 600V N-Channel General Purpose Switching Device Applications ■ Features • 600V, 2.
0A, RDS(on) = maximum 5Ω@VGS = 10V.
• 100% avalanche, EAS tested.
• Suffix "G" indicates Halogen-free part, ex.
M02N601D1G.
■ Outline TO-251 0.
264(6.
7) 0.
248(6.
3) 0.
205(5.
2) 0.
189(4.
8) 0.
060(1.
52) 0.
058(1.
48) 0.
098(2.
5) 0.
083(2.
1) 0.
024(0.
6) 0.
016(0.
4) 0.
193(4.
9) 0.
181(4.
6) 0.
217(5.
52) 0.
216(5.
48) 0.
583(14.
80) 0.
559(14.
20) 0.
209(5.
3) 0.
193(4.
9) ■ Mechanical data • Epoxy:UL94-V0 rated flame retardant • Case : JEDEC TO-251 molded plastic body over passivated chip • Lead : Axial leads, solderable per MIL-STD-202, Method 208 guranteed.
GDS 0.
035(0.
90) 0.
020(0.
50) 0.
297(7.
55) 0.
293(7.
45) 0.
035(0...






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