N Channel
MOSFET com 2.
0A
M02N60B
PIN CONFIGURATION
FEATURE Robust High
Voltage Temination.
Avalanche Energy Specified Source-to Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Diode is Characterized for Use in Bridge Circurits IDSS and VDS(on) Specified at Elevated Temperature
1 2 3 1.
Gate 2.
Drain 3.
Source
ABSOLUTE MAXIMUM RATINGS
RATING Drain to Current - Continuous - Pulsed Gate-to-Source
Voltage – Continue - Non-repetitive Total Power Dissipation TO-251/252 TO-220 Operating and Storage Temperature Range Single Pulse Drain-to-Source Avalanche Energy – Tj = 25¢J (VDD =100V, VGS = 10V, IAS = 2A, L = 10mH, RG = 25£[) Thermal Resistance – Junction t...