M29DW323DT M29DW323DB
32 Mbit (4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block) 3V Supply Flash Memory
PRELIMINARY DATA
FEATURES SUMMARY s SUPPLY
VOLTAGE
– VCC = 2.
7V to 3.
6V for Program, Erase and Read
– VPP =12V for Fast Program (optional) s ACCESS TIME: 70, 90ns s PROGRAMMING TIME
– 10µs per Byte/Word typical – Double Word/ Quadruple Byte Program s MEMORY BLOCKS – Dual Bank Memory Array: 8Mbit+24Mbit – Parameter Blocks (Top or Bottom Location) s DUAL OPERATIONS – Read in one bank while Program or Erase in
other s ERASE SUSPEND and RESUME MODES
– Read and Program another Block during Erase Suspend
s UNLOCK BYPASS PROGRAM COMMAND – Faster Production/Batch Programming
s VPP/WP PIN for FAST PR...