M29DW640D
64 Mbit (8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block) 3V Supply Flash Memory
FEATURES SUMMARY
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SUPPLY
VOLTAGE – VCC = 2.
7V to 3.
6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ASYNCHRONOUS PAGE READ MODE – Page Width 4 Words – Page Access 25, 30ns – Random Access 70, 90ns PROGRAMMING TIME – 10µs per Byte/Word typical – 4 Words / 8 Bytes at-a-time Program MEMORY BLOCKS – Quadruple Bank Memory Array: 8Mbit+24Mbit+24Mbit+8Mbit – Parameter Blocks (at both Top and Bottom) DUAL OPERATIONS – While Program or Erase in a group of banks (from 1 to 3), Read in any of the other banks PROGRAM/ ERASE SUSPEND and RESUME MODES – Read from any Block during Progr...