M29F400BT M29F400BB
4 Mbit (512Kb x8 or 256Kb x16, Boot Block) single supply Flash memory
Features
■ Single 5 V ± 10% supply
voltage for program, erase and read operations
■ Access time: 45 ns
■ Programming time – 8 µs per Byte/Word typical
■ 11 memory blocks – 1 Boot Block (Top or Bottom Location) – 2 Parameter and 8 Main Blocks
■ Program/erase controller – Embedded Byte/Word Program algorithm – Embedded Multi-Block/Chip Erase algorithm – Status Register Polling and Toggle Bits – Ready/Busy Output Pin
■ Erase Suspend and Resume modes – Read and Program another Block during Erase Suspend
■ Unlock Bypass Program command – Faster Production/Batch Programming
■ Temporary block unprotection mod...