M29W008AT M29W008AB
8 Mbit (1Mb x8, Boot Block) Low
Voltage Single Supply Flash Memory
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2.
7V to 3.
6V SUPPLY
VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ACCESS TIME: 80ns PROGRAMMING TIME: 10µs typical PROGRAM/ERASE CONTROLLER (P/E.
C.
) – Program Byte-by-Byte – Status Register bits and Ready/Busy Output
s s s
s s s
SECURITY PROTECTION MEMORY AREA INSTRUCTIONS ADDRESS CODING: 3 digits MEMORY BLOCKS – Boot Block (Top or Bottom location) – Parameter and Main blocks
TSOP40 (N) 10 x 20mm
s s
BLOCK, MULTI-BLOCK and CHIP ERASE MULTI BLOCK PROTECTION/TEMPORARY UNPROTECTION MODES ERASE SUSPEND and RESUME MODES – Read and Program another Block during Erase Suspend Figure 1.
Logic Diagram
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