M29W064FT M29W064FB
64-Mbit (8 Mbit x8 or 4 Mbit x16, page, boot block) 3 V supply flash memory
Preliminary Data
Features
Supply
voltage – VCC = 2.
7 V to 3.
6 V for program, erase, read – VPP =12 V for fast program (optional)
Asynchronous random/page read – Page width: 4 words – Page access: 25 ns – Random access: 60, 70 ns
Programming time – 10 μs per byte/word typical – 4 words/8 bytes program
135 memory blocks – 1 boot block and 7 parameter blocks, 8 Kbytes each (top or bottom location) – 127 main blocks, 64 Kbytes each
Program/erase controller – Embedded byte/word program algorithms
Program/erase suspend and resume – Read from any block during program suspend – Read and progr...